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High sensitivity slow light interferometer based on dispersiveproperty of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor materials
Author(s) -
Cai Yuan-Xue,
Yundong Zhang,
Dang Bo-Shi,
Hao Wu,
Jinfang Wang,
Ping Yuan
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.040701
Subject(s) - semiconductor , interferometry , astronomical interferometer , sensitivity (control systems) , optics , optoelectronics , materials science , physics , electronic engineering , engineering
We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors. The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor. Furthermore, the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium. Moreover, we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.

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