High sensitivity slow light interferometer based on dispersiveproperty of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor materials | Zendy

Cai Yuan-Xue | Zendy; Yundong Zhang | Zendy; Boshi Dang | Zendy; Hao Wu | Zendy; Wang Jinfang | Zendy; Yuan Ping | Zendy

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High sensitivity slow light interferometer based on dispersiveproperty of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor materials

Author(s) -

Cai Yuan-Xue,

Yundong Zhang,

Boshi Dang,

Hao Wu,

Wang Jinfang,

Yuan Ping

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.040701

Subject(s) - semiconductor , interferometry , astronomical interferometer , sensitivity (control systems) , optics , optoelectronics , materials science , physics , electronic engineering , engineering

We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors. The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor. Furthermore, the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium. Moreover, we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.

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