Open AccessComprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode
Author(s) -
Xiaoqian Fu,
Benkang Chang,
Biao Li,
Xiaohui Wang,
JianTian Qiao
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.038503
Subject(s) - photocathode , optoelectronics , materials science , quantum efficiency , electron , opacity , electron affinity (data page) , field (mathematics) , engineering physics , mode (computer interface) , quantum , key (lock) , nanotechnology , optics , computer science , physics , molecule , nuclear physics , mathematics , quantum mechanics , pure mathematics , operating system , computer security
GaN is becoming a promising material in ultraviolet detection and vacuum electronic source field for its good performance. High quantum efficiencies of greater than 70% and 30% have been achieved for the opaque mode and transparent mode GaN photocathode, respectively. This paper reviews the progress of GaN photocahtode in three important fields,including structure design, surface cleaning and Cs/O activation, analyzes the key factors influencing the quantum efficiency, and evaluates the prospect for its development.