Open AccessInvestigation of luminescence properties of basal plane dislocations in 4H-SiC
Author(s) -
Rui-Xia Miao,
Yuming Zhang,
Xiaoyan Tang,
Yimen Zhang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.037808
Subject(s) - cathodoluminescence , materials science , luminescence , basal plane , dislocation , ultimate tensile strength , enhanced data rates for gsm evolution , blueshift , core (optical fiber) , condensed matter physics , photoluminescence , optics , molecular physics , optoelectronics , composite material , chemistry , physics , computer science , telecommunications
Luminescence properties of basal plane dislocations in 4H-SiC are studied by means of cathodoluminescence(CL) and defect selective etching. It is found that basal plane screw dislocations (BTSD) and basal plane mixed dislocations (BMD) have green and blue-green luminescence properties, respectively. The spectrum peaks near 530 nm and 480 nm correspond to BTSD and BMD,respectively. It is found from measurement that the luminescence peak from BMD is blue-shifted. The atoms of BTSD near the dislocation core are affected by tensile stress along the Burger’s vector direction, leading to its band gap narrowed. In addition, the Burger’s vector of BMD has both screw and edge components. It is the edge component that is responsible for the band gap broadening. In other words, the wavelength from BMD is shorter than that from BTSD.