Open AccessStudy of zinc tin oxide thin-film transistor
Author(s) -
Wei Xiong,
Cai Xi-Kun,
Ziming Yuan,
Xiaobo Zhu,
Qiu Dong-Jiang,
Huizhen Wu
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.037305
Subject(s) - materials science , thin film transistor , plasma enhanced chemical vapor deposition , optoelectronics , tin , threshold voltage , zinc , sputter deposition , layer (electronics) , transistor , thin film , equivalent oxide thickness , gate oxide , gate dielectric , dielectric , chemical vapor deposition , tin oxide , sputtering , voltage , nanotechnology , electrical engineering , metallurgy , doping , engineering
Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.