Study of zinc tin oxide thin-film transistor | Zendy

Xiong Wang | Zendy; Xi-Kun Cai | Zendy; Zijian Yuan | Zendy; Zhu Xiaming | Zendy; Qiu Dong-Jiang | Zendy; Huizhen Wu | Zendy

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Study of zinc tin oxide thin-film transistor

Author(s) -

Xiong Wang,

Xi-Kun Cai,

Zijian Yuan,

Zhu Xiaming,

Qiu Dong-Jiang,

Huizhen Wu

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.037305

Subject(s) - materials science , thin film transistor , plasma enhanced chemical vapor deposition , optoelectronics , tin , threshold voltage , zinc , sputter deposition , layer (electronics) , transistor , thin film , equivalent oxide thickness , gate oxide , gate dielectric , dielectric , chemical vapor deposition , tin oxide , sputtering , voltage , nanotechnology , electrical engineering , metallurgy , doping , engineering

Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.

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