Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface | Zendy

Jingjing Yang | Zendy; Wenhan Du | Zendy

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Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface

Author(s) -

Jingjing Yang,

Wenhan Du

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.037301

Subject(s) - annealing (glass) , scanning tunneling microscope , materials science , silicon , oxide , silicon monoxide , nanoscopic scale , quantum tunnelling , nano , forming gas , silicon oxide , thin film , pulsed laser deposition , analytical chemistry (journal) , nanotechnology , optoelectronics , metallurgy , chemistry , composite material , silicon nitride , chromatography

For the investigation of the interface stability of SrTiO3/Sr/Si(100) system during high temperature annealing process, we have grown 1—2 atom layer SrTiO3 ultra-thin film on Sr/Si(100)-2×1 substrate using pulsed laser deposition technique. After annealing, we found that nano-scale islands appear in the surface. These nano-islands show metallic property by scanning tunneling microscopy, and the STM image shows bias voltage dependence of these nano-islands. Oxygen in the oxide reacts with silicon and forms volatile silicon monoxide during vacuum annealing, while Ti atoms in the oxide react with silicon, forming C-54 TiSi2 islands.

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