Open AccessResearch on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
Author(s) -
Gao Bo,
Xuefeng Yu,
Dazhong Ren,
Yudong Li,
Jiangwei Cui,
Mao-Shun Li,
Ming Li,
Yiyuan Wang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.036106
Subject(s) - waveform , static random access memory , field programmable gate array , irradiation , gate array , random access , materials science , cmos , physics , computer science , optoelectronics , embedded system , computer hardware , voltage , nuclear physics , operating system , quantum mechanics
In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM)-based FPGA (field programmable gate array), the irradiation response of basic cell of FPGA, i.e. the CMOS, is studied, and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1/10 of the initial value as the total dose increased, resulting from the degradation of leakage current both from field oxygen and the structure; but there are relatively high and low levels left in the output waveforms. Meanwhile, the high level cant keep the already existing state and changes to the low level, and the conversion speed is accelerated with the increase of the total dose. The low level becomes larger than the initial value. As the gate-oxygen is quite thin, the rise time, fall time, and delay of the output waveforms change little with the total dose.