Open AccessTotal dose characteristics of single poly EEPROM and SONOS EEPROM on SOI
Author(s) -
Zhiqiang Xiao,
Leilei Li,
Bo Zhang,
Jianzhong Xu,
Zhengcai Chen
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.028502
Subject(s) - eeprom , silicon on insulator , materials science , eprom , optoelectronics , non volatile memory , silicon , electrical engineering , engineering
Devices of single poly electrically ersable programmable read only memory (EEPROM) and silicon-oxide-nitride-oxide-silicon (SONOS) EEPROM on silicon on insulator (SOI) are fabricated on self-built 0.8 μm SOI process. And through a set of experiments on EEPROMs of these configurations and comparisons, SOI SONOS EEPROM is successfully developed with good and stable total dose radiation hardened characteristics. These provide stronger proofs to choose EEPROM in radiation hardened circuits.