Open AccessGate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor
Author(s) -
Wu Tie-Feng,
Heming Zhang,
Guanyu Wang,
Huiyong Hu
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.027305
Subject(s) - mosfet , materials science , quantum tunnelling , transistor , gate oxide , optoelectronics , field effect transistor , leakage (economics) , threshold voltage , metal gate , and gate , voltage , logic gate , electronic engineering , electrical engineering , engineering , economics , macroeconomics
For scaled metal-oxide semiconductor field effect transistor (MOSFET) devices, normal operation is seriously affected by the static gate tunneling leakage current due to the ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impact of gate leakage current on performance of novel strained Si device, a theoretical gate tunneling current predicting model by integral approach following the analysis of quasi-two-dimensional surface potential is presented in this study. On the basis of theoretical model, performance of MOSFET device was quantitatively studied in detail using ISE simulator, including different gate voltages and gate oxide thickness. The experiments show that simulation results agree well with theoretical analysis, and the theory and experimental data will contribute to future VLSI circuit design.