Coulomb oscillations effect in dual gate controlled silicon nanowire | Zendy

Xiangao Zhang | Zendy; Zhong-Hui Fang | Zendy; Kunji Chen | Zendy; Xinye Qian | Zendy; Liu Guang-Yuan | Zendy; Xu Jun | Zendy; Huang Xin-Fan | Zendy; Fei He | Zendy

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Coulomb oscillations effect in dual gate controlled silicon nanowire

Author(s) -

Xiangao Zhang,

Zhong-Hui Fang,

Kunji Chen,

Xinye Qian,

Liu Guang-Yuan,

Xu Jun,

Huang Xin-Fan,

Fei He

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.027304

Subject(s) - coulomb blockade , nanowire , coulomb , gate voltage , conductance , quantum dot , electron , materials science , voltage , silicon , transistor , condensed matter physics , physics , optoelectronics , quantum mechanics

The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.

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