Open AccessCoulomb oscillations effect in dual gate controlled silicon nanowire
Author(s) -
Xiangao Zhang,
Zhong-Hui Fang,
Kunji Chen,
Xinye Qian,
Guangyuan Liu,
Jun Xu,
Huang Xin-Fan,
Fei He
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.027304
Subject(s) - coulomb blockade , nanowire , coulomb , gate voltage , conductance , quantum dot , electron , materials science , voltage , silicon , transistor , condensed matter physics , physics , optoelectronics , quantum mechanics
The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.