Open AccessTunnelling and storage of charges in a-SiNx/nc-Si/a-SiNx structures
Author(s) -
Xiang Wang,
Rui Huang,
Jie Song,
Yanqing Guo,
Kunji Chen,
Li Wei
Publication year - 2011
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.027301
Subject(s) - materials science , quantum tunnelling , plasma enhanced chemical vapor deposition , capacitance , substrate (aquarium) , layer (electronics) , silicon , chemical vapor deposition , conductance , optoelectronics , silicon nitride , silane , deposition (geology) , breakdown voltage , hysteresis , voltage , nanotechnology , composite material , condensed matter physics , electrical engineering , electrode , chemistry , paleontology , oceanography , physics , sediment , biology , geology , engineering
The a-SiNx/nc-Si/a-SiNx sandwiched structures are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on n-type Si substrate. The nc-Si layer in thickness of 5 nm is fabricated from hydrogen diluted silane gas by layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layer are 3 nm and 20 nm, respectively. Conductance-voltage and capacitance-voltage measurements are used to study the charges tunnelling and storage in the sandsiched structures. Distinct frequency-dependent conductance peaks due to charges tunneling into the nc-Si dots and capacitance-voltage hysteresis characteristic due to charges storage in the nc-Si dots are observed in the same sample. The experimental results demonstrate that by controlling the thickness of tunnel and control SiNx layers charges can be loaded onto nc-Si dots via tunnelling and be stored in a-SiNx/nc-Si/a-SiNx structures.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom