Open AccessComprehensive Survey for the Frontier Disciplines
Author(s) -
Xiaohu Zheng,
Huang Anping,
Yang Zhi-Chao,
Xiao Zhi-Song,
Mei Wang,
Cheng Guo-An
Publication year - 2011
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.017702
Subject(s) - doping , materials science , scaling , dielectric , engineering physics , rare earth , optoelectronics , node (physics) , high κ dielectric , nanotechnology , physics , metallurgy , mathematics , geometry , quantum mechanics
As the scaling of MOSFETs continues towards 45 nm technology node, it is inevitable that Hf-based high-k materials replace the traditional SiO2 as the gate dielectrics of MOSFETs. But there are still many issues to be settled. Rare earth doping can increase the k value of dielectrics, decrease the defect densities of dielectrics and modulate the threshold voltage shift of MOSFETs. This paper reviews recent progress, the challenge of Hf-based high-k materials, the influence of rare earth doping on Hf-based high-k materials and its future trend.
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