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Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring
Author(s) -
Xun Zhou,
Yang Zai-Rong,
Zhijun Luo,
He Ye-Quan,
He Hao,
Wei Jun,
Chaoyong Deng,
Ding Zhao
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.016109
Subject(s) - reflection high energy electron diffraction , materials science , substrate (aquarium) , epitaxy , surface reconstruction , molecular beam epitaxy , surface roughness , phase (matter) , optics , crystal (programming language) , surface finish , optoelectronics , surface (topology) , nanotechnology , chemistry , composite material , physics , geology , computer science , oceanography , layer (electronics) , programming language , geometry , mathematics , organic chemistry
Using RHEED as a real-time monitoring tool, the MBE temperature measurement system was calibrated according to the relationship between GaAs (100) surface reconstruction phase and the substrate temperature, As4 beam equivalent pressure of the substrate. This approach can also be applied to other MBE systems. It provides an experimental basis of the growth of high-quality epitaxial thin films for studying of the surface roughness of InGaAs, the phase transformation process and the surface morphology.

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