Open AccessThe study of defects in Ga0.946Mn0.054As by X-ray absorption spectra
Author(s) -
Qiao Yuan-Yuan,
Xiao Zheng-Guo,
Cao Xian-Cun,
Guo Hao-Min,
Shi Tong-Fei,
Yuqi Wang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.016101
Subject(s) - annealing (glass) , materials science , curie temperature , x ray absorption spectroscopy , magnetic semiconductor , spectral line , curie , semiconductor , absorption spectroscopy , lattice (music) , condensed matter physics , nuclear magnetic resonance , analytical chemistry (journal) , chemistry , ferromagnetism , optoelectronics , optics , metallurgy , physics , astronomy , acoustics , chromatography
The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.