Open AccessTheoretical analysis on gain characteristics of siliconRaman amplifiers
Author(s) -
Liu Zu-Xue,
Ming Feng,
Qinghua Guo,
Qiao Li,
Lyu Ke-Cheng
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.014214
Subject(s) - physics , christian ministry , amplifier , raman amplification , raman scattering , raman spectroscopy , optics , atomic physics , optoelectronics , law , cmos , political science
We report the new theoretical analysis method to obtain net gain in silicon waveguide by stimulated Raman scattering, and the key parameters of the free carrier lifetime and the pump light intensity are analyzed. The free carrier lifetime threshold and pump light intensity threshold are deduced. The gain characteristics of silicon Raman amplifiers with different pumping schemes are investigated, and the results show that the gain can be significantly enhanced in the bidirectional pump scheme.