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Characteristics of dual-wavelength vertical-cavitysurface-emitting lasers
Author(s) -
Baolu Guan,
Xia Guo,
Jinglan Zhang,
Xi-Feng Ren,
Shiyi Guo,
Shuo Li,
Chuai Dong-Xu,
Shen Guang-di
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.014209
Subject(s) - materials science , vertical cavity surface emitting laser , optics , optoelectronics , laser , wavelength , bistability , amplifier , photonics , physics , cmos
Based on asymmetric one-dimensional photonic crystal structure,a dual-wavelength vertical-cavity surface-emitting laser (VCSEL) with modified standing wave field distribution has been constructed. The defect layer is Al0.8Ga0.2As with 5λ/4 thickness. Specifically, the dual-wavelength output spectrum of the VCSEL has low absorption loss, easy wavelength adjustment and same output direction. In addition, the two wavelengths and their spacing could be tuned by changing the refractive index contrast of the asymmetric PC structure and the thickness of defect layer. Such dual-VCSEL structure can be applied in optical bistable switches, amplifiers, modulators and detectors, etc..

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