Open AccessThreshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor
Author(s) -
Hongxia Liu,
Xiangkun Yin,
Bingjie Liu,
Yue Hao
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8877
Subject(s) - threshold voltage , materials science , field effect transistor , mosfet , transistor , semiconductor , voltage , band gap , optoelectronics , strained silicon , silicon on insulator , silicon , condensed matter physics , electrical engineering , physics , engineering , amorphous silicon , crystalline silicon
This paper investigates the threshold voltage analytic model of strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor (SGOI pMOSFET), revises the energy band model of strained-silicon, and extracts the main physical parameters of strained-SiGe devices. These parameters include the energy gap, electron affinity, build-up potential, etc. In this paper, the two-dimensional Possions equation of build-in potential in strained silicon SGOI pMOSFET is also presented. By using the boundary conditions to solve these equations, an accurate threshold voltage analytic model is proposed and its validity is verified.