Open AccessEffects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions
Author(s) -
Jun Zhou,
Di Ming-Dong,
Tao Sun,
Sun Yong-Tang,
Hao Wang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8870
Subject(s) - wafer , materials science , substrate (aquarium) , electrical resistivity and conductivity , heterojunction , solar cell , silicon , optoelectronics , electrical engineering , oceanography , engineering , geology
For silicon heterojunction solar cell with p-type a-Si:H back surface field, the effects of substrate resistivity on the performance of solar cell with different defect densities on the front and the rear surfaces of the p-type c-Si wafer are investigated numerically by computer simulation. The results indicate that the optimized resistivity of the substrate (ρop) is related to the interface defect density on the front surface of c-Si wafer (Dit1), and ρopincreases with the increase of Dit1.The value scale of resistivity of substrate is influenced greatly by the interface defect density on the rear surface of c-Si wafer (Dit2) for ρ>ρop, and the larger the value of Dit2, the smaller will the range of acceptable ρ value be.