Open AccessEffect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure
Author(s) -
Xiu Ming-Xia,
Junfeng Ren,
Yumei Wang,
Yuan Xiao-Bo,
Guojie Hu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8856
Subject(s) - schottky barrier , condensed matter physics , materials science , organic semiconductor , spin polarization , doping , semiconductor , ferromagnetism , schottky diode , metal–semiconductor junction , spin (aerodynamics) , magnetic semiconductor , optoelectronics , electron , physics , diode , thermodynamics , quantum mechanics
Theoretically we have studied the current spin polarization in the structure of ferromagnetic/organic semiconductor under Schottky contact and discussed its variations with potential barrier height, the special carriers in organic semiconductor layer and the its mobilities, doping concentration near the interface. The calculations show that the high mobilities of the carriers in organic semiconductors are conducive to the spin injection. We also find that a significant depletion region at Schottky contact is highly undesirable for spin injection. For an efficient spin injection, the depletion region near the interface should be heavily doped and the effective barrier height should be restricted wichin certain range.