Open AccessMechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile
Author(s) -
Zhengxia Tang,
Shen Honglie,
Jiang Feng,
Ru Fang,
LU Li-zhu,
Huang Hai-Bin,
Hong Cai
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8770
Subject(s) - nucleation , materials science , crystallization , crystallite , annealing (glass) , polycrystalline silicon , aluminium , sputter deposition , amorphous solid , silicon , grain size , thin film , sputtering , composite material , chemical engineering , crystallography , metallurgy , nanotechnology , layer (electronics) , thermodynamics , thin film transistor , chemistry , engineering , physics
In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization, the stack of a-Si/SiO2/Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles. The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases. It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature, the distance of depletion region, and the distance of adjacent grains.