Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile | Zendy

Zhengxia Tang | Zendy; Honglie Shen | Zendy; Feng Jiang | Zendy; Fang Ru | Zendy; Linfeng Lu | Zendy; Haibin Huang | Zendy; Cai Hong | Zendy

Open Access

Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile

Author(s) -

Zhengxia Tang,

Honglie Shen,

Feng Jiang,

Fang Ru,

Linfeng Lu,

Haibin Huang,

Cai Hong

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.8770

Subject(s) - nucleation , materials science , crystallization , crystallite , annealing (glass) , polycrystalline silicon , aluminium , sputter deposition , amorphous solid , silicon , grain size , thin film , sputtering , composite material , chemical engineering , crystallography , metallurgy , nanotechnology , layer (electronics) , thermodynamics , thin film transistor , chemistry , engineering , physics

In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization, the stack of a-Si/SiO2/Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles. The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases. It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature, the distance of depletion region, and the distance of adjacent grains.

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