Open AccessCharacteristic of hybrid single electron transistor and metal oxide semiconductor structure in Chua’s circuit
Author(s) -
Feng Chao-Wen,
Cai Li,
Lisen Zhang,
Yang Xiao-Kuo,
Xiaohu Zhao
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8420
Subject(s) - scroll , chaotic , chua's circuit , transistor , electronic circuit , semiconductor , physics , topology (electrical circuits) , computer science , mathematics , quantum mechanics , voltage , artificial intelligence , archaeology , combinatorics , history
The negative differential resistance (NDR) characteristic equation of single electron transistor and metal oxide semiconductor (SETMOS) hybrid structure is simplified by a fitting method. And a new approach to designing multi-scroll chaotic circuit with SETMOS is proposed. The effect of NDR characteristic on the equilibrium point of multi-scroll Chua’s circuit is analyzed both qualitatively and quantitatively. The results show that the unidirectional motions of radial contract and axial tension occur in the negative sections of multi-scroll Chua’s circuit, whereas in the positive sections appear the scroll motions of radial tension and axial contract. The result provides theoretical basis for the construction of multi-scroll chaotic circuits and the further study of their complex dynamical behaviors.