Photo-absorption coefficient approximation of hydrogenated silicon films
Author(s) -
Liqiang Guo,
Ding Jianning,
Jichang Yang,
Wang Shu-Bo,
YE Feng,
Cheng Guang-Gui,
Ling Zhiyong,
Fan Hui-Juan,
Yuan Ningyi,
Xiuqin Wang
Publication year - 2010
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8184
Subject(s) - materials science , silicon , attenuation coefficient , absorption (acoustics) , raman spectroscopy , analytical chemistry (journal) , chemical vapor deposition , plasma enhanced chemical vapor deposition , plasma , optics , optoelectronics , composite material , physics , chemistry , chromatography , quantum mechanics
Hydrogenated silicon films are prepared on Corning 7059 glass by the plasma enhanced chemical vapour deposition technique with radio frequency ( RF),power,(13.56 MHz) and DC bias. The microstructures of hydrogenated silicon films investigated by Raman spectra. The photo-absorption coefficient is calculated by utilizing an established photo-absorption model. The I-V characteristics of hydrogenated silicon film solar cells are simulated by using software AMPS. The results show that photo-absorption coefficient curves and I-V curves are both consistent well with experimental data. At the same time, the difference between experimental results are calculated results were analyzed.
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