Open AccessContact effect in organic thin film transistors
Author(s) -
Qinjun Sun,
Zheng Xu,
Suling Zhao,
Fujun Zhang,
Liyan Gao,
Tian Xia,
Yongsheng Wang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8125
Subject(s) - materials science , thin film transistor , pentacene , wafer , optoelectronics , transistor , threshold voltage , silicon , voltage , nanotechnology , layer (electronics) , electrical engineering , engineering
The contact effect on the performances of organic thin film transistors (OTFTs) is studied here. We fabricate Bottom-gated top-contact Pentacene-OTFTs on heavily doped n type Silicon wafers with using Al modified by MoO3 as source and drain electrodes. Field effect mobility μef of the OTFT reaches 0.42cm2/V ·s,the threshold voltage and the on/off current ratio arrive at -5.0 V and 4.7×103 respectively. The electric potential distribution in the channel is qualitively investigated by means of middle probe method (MPM) and the output curve is simulated by the charge drift method. Considering the contact effect,the μef is greatly improved to 1.1 cm2/V ·s,which indicates the importance of the contact engineering in OTFTs.