Open AccessInfluence of well structure on efficiency of organic light-emitting diodes
Author(s) -
Hongtu Zhu,
Zheng Xu,
Suling Zhao,
Fujun Zhang,
Chao Kong,
Guang Ye,
Wei Gong
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.8093
Subject(s) - brightness , oled , optoelectronics , quantum efficiency , materials science , layer (electronics) , exciton , quantum well , light emitting diode , diode , active layer , optics , nanotechnology , physics , condensed matter physics , laser , thin film transistor
Five kinds of organic quantum well structured light-emitting devices are fabricated, and their electrical characteristics are studied. The effects of quantum well period number and barrier thickness on device performance are analyzed. Experimental results show that appropriate cycle quantum well structured devices have higher brightness and current efficiency than the traditional three-layer devices. That is because of the limitation effect of quantum well structure on electrons and holes,and the structure of this kind could improve the composite probability of excitons in the light-emitting layer,thereby increasing brightness and efficiency of OLED. There is also an effect on brightness and efficiency when the potential well layer thickness of quantum well structured device is changed. Consequently,the adoption of appropriate potential well layer thickness can also improve the brightness and the efficiency of the device.