Open AccessInterface structure effects on optical property of undoped ZnSe/BeTe type-Ⅱ quantum wells
Author(s) -
冀子武,
郑雨军,
徐现刚,
鲁云
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.7986
Subject(s) - photoluminescence , heterojunction , quantum well , electric field , linear polarization , materials science , excitation , polarization (electrochemistry) , spectral line , perpendicular , condensed matter physics , spontaneous emission , molecular physics , optoelectronics , optics , physics , laser , chemistry , geometry , mathematics , quantum mechanics , astronomy
The results are reported of the spatially indirect photoluminescence (PL) spectrum measurements performed on undoped ZnSe/BeTe type-Ⅱ quantum wells with special interface structures at low temperatures (5—10 K). The PL spectra have two main peaks that show a weak PL intensity and a low linear polarization degree and that their linear polarizations are contrary to each other, And the PL spectra are strikingly dependent on an applied external electric field perpendicular to the layers. The results show that the special interface structures reduce spatially indirect radiative recombination efficiency and linear polarization degree, and that a weak built-in electric field exists in the heterostructure. With the increase of excitation intensity, the PL peak on high energy side shows a rapid increase. This is explained by the formation of high charge density on both sides of the high energy side interface.