
Study on rate coefficient of dielectronic recombination in dense plasma based on doubly excited state
Author(s) -
Wei Wang,
Gang Jiang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.7815
Subject(s) - autoionization , excited state , atomic physics , plasma , ionization , physics , recombination rate , recombination , ion , photoionization , chemistry , quantum mechanics , biochemistry , gene
The method to calculate the rate coefficient of dielectronic recombination (DR) in dense plasma is discussed in this paper. The formula for calculating the DR rate coefficient as a function of electron density is derived under the effects of transition processes among doubly excited states, collisional ionization and autoionization corresponding to doubly excited states. And the calculation results for DR of Ne-like Ni based on the formula are given. The results show the trend of the change in DR rate coefficient as electron density increases. Additionally, the DR rate coefficients under the effects of different atomic processes are given and analyzed.