Open AccessTheoretical study on strain compensation layer for growth of quantum dots
Author(s) -
Hao Feng,
Zhongyuan Yu,
Yumin Liu,
Pengfei Lu,
Baohua Jia,
Wenjie Yao,
Hongda Tian,
Wei Zhao,
Xu Zi-Huan
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.765
Subject(s) - quantum dot , materials science , strain (injury) , compensation (psychology) , layer (electronics) , quality (philosophy) , condensed matter physics , crystal (programming language) , reduction (mathematics) , optoelectronics , nanotechnology , physics , quantum mechanics , computer science , mathematics , medicine , psychology , psychoanalysis , geometry , programming language
The optical properties of quantum dots have a close relationship with the size fluctuationdensitystrain filed distribution of the dots and the spacer layer thickness. InAs/GaAs quantum dot with GaNXAs1-X strain compensation layers SCL is theoretically investigated for improving the crystal quality. The reduction effects of the spacer thickness are discussed quantitatively. The influence of the location and the N concentration of the GaNXAs1-X SCL on compensation of the strain formed on quantum dots QDs and the system is also discussed. The reduction effect of SCL on strain of system is analyzed and the vertical alignment probability between the adjacent layers is calculated. Our results can provide a theoretical basis for finding the optimal properties of SCL to realize the high quality multi-QD layer.