Open AccessDesign and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition
Author(s) -
Yabai He,
Sun Chang-Zheng,
JianXin Xu,
Qing Wu,
Bing Xiong,
Yi Luo
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.7239
Subject(s) - materials science , fabrication , plasma enhanced chemical vapor deposition , refractive index , anti reflective coating , coating , optoelectronics , chemical vapor deposition , thin film , layer (electronics) , laser , optical coating , optics , wavelength , plasma , nanotechnology , medicine , alternative medicine , physics , pathology , quantum mechanics
The design and fabrication of multilayer antireflection (AR) coating based on plasma enhanced chemical vapor deposition (PECVD) is studied for its applications in optoelectronic devices. Deposition conditions for obtaining SiO2/SiNx thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiNx. Four-layer SiO2/SiNx AR coating is designed to exhibit a reflectivity of less than 10-4 over 70 nm bandwidth. Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5×10-4 when the thickness deviation of any single layer is within ±5 nm from the designed value. Based on the simulation results, SiO2/SiNx multilayer AR coating is deposited on the end facet of a Fabry-Perot laser. By analyzing the output spectra of the laser, the residual reflectivity of the AR coating is determined to be on the order of 10-4 over the wavelength range of 1535—1565 nm.