Open AccessEffects of In doping on crystal structure and thermoelectric properties of n-type skutterudites
Author(s) -
Long Zhou,
Lei Han,
Xianli Su,
Xinfeng Tang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.7219
Subject(s) - skutterudite , spark plasma sintering , materials science , thermoelectric effect , doping , diffraction , crystal structure , thermoelectric materials , electrical resistivity and conductivity , analytical chemistry (journal) , thermal conductivity , condensed matter physics , sintering , composite material , crystallography , optoelectronics , optics , thermodynamics , physics , electrical engineering , chromatography , engineering , chemistry
Skutterudite compounds InxCo4Sb12(x=0.1—0.4) have been synthesized by a melt-quench-anneal-spark plasma sintering method. x-ray diffraction (XRD) and filed emission scanning electron microscopy (FESEM) results show that doping of In results in a nano structured InSb phase distributed in the grain boundaries when the content of In exceeds its filling fraction limit in the skutterudites. Furthermore, the content of InSb increases with increasing In content. Our research indicates that the existence of nanostructured secondary phase InSb increases the power factor, decreases the lattice thermal conductivity, and therefore remarkably improves the thermoelectric properties of the compounds. The highest thermoelectric figure of merit ZT=1.21 is achieved at 800 K in the In0.35Co4Sb12 compound.