Open AccessThe mathematical model and properties of memristor with border constraint
Author(s) -
Xu Zhang,
Zhou Yu-Ze,
Qiang Bi,
Xinghua Yang,
Yunxiao Zu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.6673
Subject(s) - memristor , constraint (computer aided design) , relation (database) , voltage , doping , computer science , flux (metallurgy) , materials science , mathematics , physics , quantum mechanics , optoelectronics , geometry , database , metallurgy
The properties of memristor as the fourth basic circuit element are studied. The mathematical models in integral form for memristors with and without border constraint are developed. The simulation is done for the memristor with border constraint. The influences of the source frequency and model parameters on the memristor’s properties are analyzed and some conclusions are drawn. The model parameters considered include the doping ratio and the initial doping width, and their influnce on the current, voltage-current relation and flux-charge relation of the memrister are investigaled.