Open AccessS-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell
Author(s) -
Zhong Chen,
Geng Kui-Wei,
Ruohe Yao
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.6538
Subject(s) - heterojunction , materials science , depletion region , impurity , solar cell , electric field , amorphous solid , valence band , rectangular potential barrier , silicon , recombination , optoelectronics , condensed matter physics , band gap , crystallography , semiconductor , physics , chemistry , biochemistry , quantum mechanics , gene
In this paper the physical mechanism of the S-shaped J-V characteristics of (p) a-Si:H/(n) c-Si heterojunction solar cell at low working temperatures, low impurity concentrations in the a-Si:H layer, high valence band offsets or high interface defect densities is studied by heterojunction interface analysis and AMPS simulations. The results show that the barrier at the amorphous/crystalline interface hinders the collection of photogenerated holes. A high hole accumulation at the interface, in combination, causes a shift of the depletion region from the c-Si into the a-Si:H. This leads to the electric field decreasing, and the enhanced recombination inside the c-Si depletion region causes a significant current loss. It results in the S-shaped J-V characteristics.