S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell | Zendy

Zhong Chun-Liang | Zendy; Geng Kui-Wei | Zendy; Yao Ruo-he | Zendy

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S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell

Author(s) -

Zhong Chun-Liang,

Geng Kui-Wei,

Yao Ruo-he

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.6538

Subject(s) - heterojunction , materials science , depletion region , impurity , solar cell , electric field , amorphous solid , valence band , rectangular potential barrier , silicon , recombination , optoelectronics , condensed matter physics , band gap , crystallography , semiconductor , physics , chemistry , biochemistry , quantum mechanics , gene

In this paper the physical mechanism of the S-shaped J-V characteristics of (p) a-Si:H/(n) c-Si heterojunction solar cell at low working temperatures, low impurity concentrations in the a-Si:H layer, high valence band offsets or high interface defect densities is studied by heterojunction interface analysis and AMPS simulations. The results show that the barrier at the amorphous/crystalline interface hinders the collection of photogenerated holes. A high hole accumulation at the interface, in combination, causes a shift of the depletion region from the c-Si into the a-Si:H. This leads to the electric field decreasing, and the enhanced recombination inside the c-Si depletion region causes a significant current loss. It results in the S-shaped J-V characteristics.

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