
Thermal stability and charge dynamics of piezoelectrets with tailored micro-structure
Author(s) -
Guangwen Cao,
Xiaoqing Zhang,
Sun Zhuan-Lan,
Xuewen Wang,
Ke-xing Lou,
Zhang Xia
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.6514
Subject(s) - materials science , composite material , dielectric , void (composites) , porosity , polytetrafluoroethylene , thermal stability , annealing (glass) , piezoelectricity , modulus , chemical engineering , optoelectronics , engineering
The laminated fluoroethylenepropylene (FEP) and porous polytetrafluoroethylene (PTFE) films with regular void structure are prepared by using a rigid template with a periodic-structured surface. The porous PTFE film is firstly patterned with the rigid template surface by applying force on the stack of porous PTFE film and the template, then followed by the fusion bonding process to bond the FEP and patterned porous PTFE together. The corona charging technique is used to make the laminated film piezoelectric, i.e., to become piezoelectrets. The Young’s modulus of the laminated FEP/PTFE films is determined by dielectric resonance spectra. The thermal stability of the piezoelectric d33 coefficients are characterized by measuring the decay of d33 at elevated temperatures. The charge dynamics in such FEP/PTFE piezoelectrets is investigated by analying the thermally stimulated discharge current spectra in short circuit. The results show that laminated FEP/PTFE films with very regular void structure can be made by using rigid template and fusion bonding process. The Young's modulus of such films is about 0.53 MPa. The maximum quasi-static piezoelectric d33 coefficient up to 500 pC/N is achieved. The laminated FEP/PTFE films show improved thermal stability. For example, the remnant d33value is around 22% of the initial value for the sample annealed at 150 ℃ for 5000 min. For the samples after annealing treatment, the main drift path of the detrapped charges is through the solid dielectric layer.