Calculation of positron lifetime of compound semiconductors | Zendy

Chen Xiang-Lei | Zendy; Jie Zhang | Zendy; Du Huai-Jiang | Zendy; Zhou Xian-Yi | Zendy; Bangjiao Ye | Zendy

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Calculation of positron lifetime of compound semiconductors

Author(s) -

Chen Xiang-Lei,

Jie Zhang,

Du Huai-Jiang,

Zhou Xian-Yi,

Bangjiao Ye

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.603

Subject(s) - positron , positron annihilation , annihilation , semiconductor , materials science , atomic physics , positron lifetime spectroscopy , positron emission tomography , physics , nuclear physics , condensed matter physics , nuclear medicine , electron , optoelectronics , medicine

On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.

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