Open AccessCalculation of positron lifetime of compound semiconductors
Author(s) -
Xianglei Chen,
Jie Zhang,
Du Huai-Jiang,
Xianju Zhou,
Bangjiao Ye
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.603
Subject(s) - positron , positron annihilation , annihilation , semiconductor , materials science , atomic physics , positron lifetime spectroscopy , positron emission tomography , physics , nuclear physics , condensed matter physics , nuclear medicine , electron , optoelectronics , medicine
On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.