Open AccessFabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer
Author(s) -
Rui Huang,
Danqing Wang,
Jie Song,
Ding Hong-Lin,
Xiang Wang,
Yanqing Guo,
Kunji Chen,
Jun Xu,
Wei Li,
Zhongyuan Ma
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.5823
Subject(s) - materials science , electroluminescence , fabrication , luminescence , annealing (glass) , nanocrystal , optoelectronics , irradiation , quantum dot , laser , chemical vapor deposition , grain size , photoluminescence , quantum efficiency , nanotechnology , composite material , optics , layer (electronics) , medicine , alternative medicine , physics , pathology , nuclear physics
SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.