Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers | Zendy

Ding Guo-Jian | Zendy; Liwei Guo | Zendy; Xing Zhi-Gang | Zendy; Yao Chen | Zendy; Peiqiang Xu | Zendy; Jia Hai-Qiang | Zendy; Junming Zhou | Zendy; Hong Chen | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers

Author(s) -

Ding Guo-Jian,

Liwei Guo,

Xing Zhi-Gang,

Yao Chen,

Peiqiang Xu,

Jia Hai-Qiang,

Junming Zhou,

Hong Chen

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.5724

Subject(s) - materials science , heterojunction , superlattice , optoelectronics , barrier layer , layer (electronics) , high electron mobility transistor , alloy , transistor , composite material , voltage , physics , quantum mechanics

We report the growth and characterization of AlGaN/GaN heterostructures with AlN/GaN superlattices as the barrier layer.It is found that the surface morphology of the heterostructure is greatly improved compared with those using the conventional alloy AlGaN barrier layer.Meanwhile, electric properties of samples with high Al composition (≥40%) are superior to the conventional alloy sanples.Low sheet resistance (251 Ω/□) is obtained for our samples with 40% Al content.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research