Open AccessGrowth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers
Author(s) -
丁国建,
郭丽伟,
邢志刚,
陈耀,
徐培强,
贾海强,
周均铭,
陈弘
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.5724
Subject(s) - materials science , heterojunction , superlattice , optoelectronics , barrier layer , layer (electronics) , high electron mobility transistor , alloy , transistor , composite material , voltage , physics , quantum mechanics
We report the growth and characterization of AlGaN/GaN heterostructures with AlN/GaN superlattices as the barrier layer.It is found that the surface morphology of the heterostructure is greatly improved compared with those using the conventional alloy AlGaN barrier layer.Meanwhile, electric properties of samples with high Al composition (≥40%) are superior to the conventional alloy sanples.Low sheet resistance (251 Ω/□) is obtained for our samples with 40% Al content.