Characteristics of a SiC SBD with semi-superjunction structure | Zendy

Yang Yintang | Zendy; Geng Zhen-Hai | Zendy; Baoxing Duan | Zendy; Jia Hujun | Zendy; Yu Cen | Zendy; Ren Li-Li | Zendy

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Characteristics of a SiC SBD with semi-superjunction structure

Author(s) -

Yang Yintang,

Geng Zhen-Hai,

Baoxing Duan,

Jia Hujun,

Yu Cen,

Ren Li-Li

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.566

Subject(s) - materials science , breakdown voltage , optoelectronics , schottky barrier , diode , schottky diode , p–n junction , voltage , electrical engineering , semiconductor , engineering

A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed, which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific on-resistance (Ron-sp) in different SJ depth and width are studied using two-dimensional simulator Medici and compared with conventional SiC SBD. The results show that Ron-sp is greatly reduced (greater than 10%) with VB unchanged (less than 4%) when the SJ width is chosen as 2—3 μm and SJ depth is deeper than 5 μm.

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