Open AccessCharacteristics of a SiC SBD with semi-superjunction structure
Author(s) -
Yintang Yang,
Geng Zhen-Hai,
Baoxing Duan,
Hongbo Jia,
Chen Yu,
Ren LiLi
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.566
Subject(s) - materials science , breakdown voltage , optoelectronics , schottky barrier , diode , schottky diode , p–n junction , voltage , electrical engineering , semiconductor , engineering
A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed, which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific on-resistance (Ron-sp) in different SJ depth and width are studied using two-dimensional simulator Medici and compared with conventional SiC SBD. The results show that Ron-sp is greatly reduced (greater than 10%) with VB unchanged (less than 4%) when the SJ width is chosen as 2—3 μm and SJ depth is deeper than 5 μm.