Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy | Zendy

邵铮铮 SHAO Zheng-zheng | Zendy; Xiaofeng Wang | Zendy; Xueao Zhang | Zendy; Shengli Chang | Zendy

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Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy

Author(s) -

邵铮铮 SHAO Zheng-zheng,

Xiaofeng Wang,

Xueao Zhang,

Shengli Chang

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.550

Subject(s) - nanorod , materials science , piezoelectricity , schottky diode , schottky barrier , optoelectronics , semiconductor , kelvin probe force microscope , diode , atomic force microscopy , nanotechnology , composite material

Piezoelectric discharge characteristic of semiconductor ZnO nanorod was studied with atomic force microscope in contact mode. The c-axial orientation ZnO nanorod array film was fabricated with two-step wet-chemical method. Electric pulses were got when Pt coated probe contact-scans the ZnO nanorod, their peak value reaches 120 pA. The electric pulse is related with the topography of ZnO nanorod and has a time duration of 30 ms. The contact of Pt coated probe and ZnO nanorod behaves as a Schottky diode. The I-V curve showed the piezoelectric voltage must be larger than 03 V to drive Schottky diode. The resistance of Schottky contact has a magnitude of GΩ order during piezoelectric discharge, which is the major factor impacting the output of piezoelectric potential.

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