Open AccessDefects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence
Author(s) -
Zhou Kai,
Hui Li,
WenZhang Zhu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.5116
Subject(s) - materials science , photoluminescence , irradiation , proton , acceptor , annealing (glass) , doping , positron annihilation spectroscopy , monatomic ion , positron annihilation , positron , condensed matter physics , chemistry , optoelectronics , physics , nuclear physics , composite material , organic chemistry , electron
Positron annihilation spectroscopy(PAS)and photoluminescence (PL) have been adopted to study defects in proton-irradiatied Zn-doped GaSb. A monovacancy VGa having a lifetime of 293 ps was observed in the non-irradiated sampls and a divacancy VGaVSb with a tifetime of 333 ps was identified in the proton-irradiated samples when the fluence reached 3×1015 cm-2.The PL results reveal that the acceptor Zn is not related with proton irradiation-induced defects, which act as non-radiation recombination centers in the samples. The acceptor level of Zn in GaSb has been calculated from the PL spectra. After proton irradiation, interstitial monatomic hydrogen in a negative charge state (Hi-) in GaSb has been found, which acts as a shallow-acceptor. Annealing experiments indicated that the as-grown and proton-irradiated samples have different annealing behaviors, the reason for which was attributed to the existence of monatomic hydrogen interstitials in the proton-irradiated samples.