Open AccessFabrication and performance of indium oxide based transparent thin film transistors
Author(s) -
徐天宁,
吴惠桢,
张莹莹,
王雄,
朱夏明,
原子健
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.5018
Subject(s) - materials science , thin film transistor , optoelectronics , fabrication , substrate (aquarium) , photolithography , thin film , indium , threshold voltage , sputtering , sputter deposition , transistor , gate oxide , oxide , grain size , voltage , nanotechnology , electrical engineering , layer (electronics) , composite material , metallurgy , medicine , oceanography , alternative medicine , engineering , pathology , geology
Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.