Fabrication and performance of indium oxide based transparent thin film transistors | Zendy

Xu Tian-Ning | Zendy; Huizhen Wu | Zendy; Yingying Zhang | Zendy; Xiong Wang | Zendy; Zhu Xiaming | Zendy; Zijian Yuan | Zendy

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Fabrication and performance of indium oxide based transparent thin film transistors

Author(s) -

Xu Tian-Ning,

Huizhen Wu,

Yingying Zhang,

Xiong Wang,

Zhu Xiaming,

Zijian Yuan

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.5018

Subject(s) - materials science , thin film transistor , optoelectronics , fabrication , substrate (aquarium) , photolithography , thin film , indium , threshold voltage , sputtering , sputter deposition , transistor , gate oxide , oxide , grain size , voltage , nanotechnology , electrical engineering , layer (electronics) , composite material , metallurgy , medicine , oceanography , alternative medicine , engineering , pathology , geology

Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.

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