Open AccessComparison of nucleation energy of nanoparticles Si formation in substrate heating and subsequent thermal annealing
Author(s) -
Deng Ze-Chao,
Qingshan Luo,
Chu Li-Zhi,
Ding Xue-Cheng,
W. Y. Liang,
Guangsheng Fu,
Yinglong Wang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.4802
Subject(s) - materials science , nucleation , annealing (glass) , crystallization , amorphous solid , raman scattering , nanoparticle , diffraction , laser ablation , silicon , scanning electron microscope , raman spectroscopy , scattering , substrate (aquarium) , chemical engineering , nanotechnology , laser , optics , crystallography , optoelectronics , composite material , thermodynamics , chemistry , physics , oceanography , geology , engineering
In vacuum environment, the nano-crystalline silicon films were prepared by pulsed laser ablation at high temperature and room temperature respectively. The amorphous films prepared under normal temperature were thermal-annealed, which leads to crystallization. The morphology and compositon etc. of the samples were characterized by scanning electron microscopy, Raman scattering and X-ray diffraction. The results showed that the temperature threshold of Si nanoparticles formation was 700 ℃ and 850 ℃ respectively. The nucleation energy of the nanoparticles was obtained by quantitative calculation, and the reason of difference between the temperature threshold was discussed from the point of view of energy.