Open AccessResearch on the optimal thickness of transmission-mode exponential-doping GaAs photocathode
Author(s) -
Zhi Yang,
JiJun Zou,
Benkang Chang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.4290
Subject(s) - photocathode , doping , photoelectric effect , exponential function , transmission (telecommunications) , diffusion , materials science , optics , physics , optoelectronics , electron , mathematics , telecommunications , mathematical analysis , quantum mechanics , computer science
The difference between the diffusion drift length of photoelectrons in exponential-doping GaAs photocathode and that in uniform-doping GaAs photocathode is studied. According to quantum equations, the optimized thickness of transmission-mode exponential-doping GaAs photocathode is simulated to be 20 μm. Two transmission-mode exponential-doping GaAs samples with the thickness of 16 and 20 μm are activated by (Cs,O) alternation technique. Integral sensitivities of the two samples are 1228 and 1547 μA/lm, respectively. The ratio of integral sensitivities of the two samples is 0796∶1, which agrees with the simulation result.