Open AccessTuning photoluminescence of single InAs quantum dot by electric field
Author(s) -
Chang Xiu-Ying,
Xiuming Dou,
Bo Sun,
Yan Xiong,
Haiqiao Ni,
Zhichuan Niu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.4279
Subject(s) - photoluminescence , electric field , quantum dot , stark effect , exciton , quantum confined stark effect , materials science , condensed matter physics , quenching (fluorescence) , field (mathematics) , optoelectronics , intensity (physics) , electro absorption modulator , physics , quantum dot laser , optics , semiconductor , fluorescence , quantum mechanics , semiconductor laser theory , mathematics , pure mathematics
By using photoluminescence (PL) and time-resolved PL spectra the optical properties of single InAs quantum dot (QD) embedded in the p-i-n structure have been studied under an applied electric field. With the increasing of electric field the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.