Open AccessMagneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure
Author(s) -
Zhou Yuan-Ming,
G. Yu,
Gao Kuang-Hong,
Lin Tie,
Guo Shao-Ling,
Chu Jun-Hao,
Ning Dai
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.4221
Subject(s) - quantum tunnelling , condensed matter physics , biasing , quantum well , materials science , magnetic field , quantum dot , ground state , scanning tunneling spectroscopy , voltage , physics , optoelectronics , atomic physics , quantum mechanics , laser
We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature (15 K) in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.