Open AccessInfluence of current aperture size on threshold in double oxide confined vertical-cavity surface-emitting lasers
Author(s) -
Hongdong Zhao,
Weihua Zhang,
Wenchao Li,
Huili Liu,
Mengtao Sun
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.3948
Subject(s) - materials science , radius , aperture (computer memory) , current density , current (fluid) , optics , laser , electric field , oxide , optoelectronics , physics , computer security , quantum mechanics , computer science , acoustics , metallurgy , thermodynamics
In this paper, the coupling equations for electric field, carrier density, optical-field and temperature are simulated self-consistently in double oxide confined vertical cavity surface emitting laser therefore the characteristics threshold are studied. The potentials near the oxide layers and the activity region are obtained and the effect of current aperture edge is simulated. The distributions of threshold injected current density, carrier density, fundamental mode and temperature for different radii of double oxide confined current aperture are obtained. An appropriately confined radius of current aperture for minimum threshold injected current is found, and the structure of vertical cavity surface emitting laser is designed.