
Dynamic behavior of negative differential conductivity and chaotic phenomena in Si thyristor
Author(s) -
Pingan Tan,
Chao Zhang,
Dongyuan Qiu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.3747
Subject(s) - thyristor , chaotic , control theory (sociology) , conductivity , mechanism (biology) , mos controlled thyristor , stability (learning theory) , instability , differential (mechanical device) , physics , mechanics , computer science , integrated gate commutated thyristor , control (management) , thermodynamics , power (physics) , quantum mechanics , artificial intelligence , machine learning
Stability and dynamic behavior of negative differential conductivity in thyristors are studied in this paper, which aims to clarify the mechanism of chaotic phenomena in the thyristor. Firstly, a spatio-temporal model of the thyristor is established, and the boundary condition of the system is obtained based on the linear stability analysis. The results show that the instability of thyristor is not only determined by the characteristics of negative differential conductivity, but also depends on the external conditions. Computer simulation is made to verify the proposed view for different external control parameters. The theoretical results are also confirmed by experimental measurements. So, the mechanism of chaotic phenomena in thyristor is clearly explained.