Open AccessPreparation and near-infrared luminescence properties of Bi-doped BaF2 crystal
Author(s) -
Zhou Peng,
Su Liang-Bi,
Hongjun Liu,
Jun Yu,
Lihe Zheng,
Qiuhong Yang,
Jun Xu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.2827
Subject(s) - luminescence , materials science , full width at half maximum , crystal (programming language) , infrared , doping , ion , irradiation , analytical chemistry (journal) , optoelectronics , optics , chemistry , physics , computer science , programming language , organic chemistry , chromatography , nuclear physics
Bi2O3:BaF2 and BiF3:BaF2 crystals were prepared by TGT (temperature gradient method). Near-infrared broadband luminescence was observed in as-grown Bi2O3:BaF2 crystal. The emission band peaks at 961 nm in the range of 850—1250 nmwith FWHM about 202 nm. The luminescence of Bi2+ and Bi3+ ions in the visible region was observed in BiF3:BaF2 crystal, but there was no near-infrared emission. Then the BiF3: BaF2 crystal was exposed to γ-rays in order to reduce valence states of Bi ions. Near-infrared broadband luminescence was observed in γ-irradiated BiF3:BaF2 crystal. The emission band peaks at 1135 nm in the range of 850—1500 nmwith FWHM about 192 nm. The mechanisms of near-infrared luminescence in Bi2O3:BaF2 crystals and γ-irradiated BiF3:BaF2 crystals were discussed.