Preparation and near-infrared luminescence properties of Bi-doped BaF2 crystal | Zendy

Zhou Peng | Zendy; Su Liang-Bi | Zendy; Hongjun Li | Zendy; Jun Yu | Zendy; Lihe Zheng | Zendy; Yang Qiu-Hong | Zendy; Jun Xu | Zendy

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Preparation and near-infrared luminescence properties of Bi-doped BaF2 crystal

Author(s) -

Zhou Peng,

Su Liang-Bi,

Hongjun Li,

Jun Yu,

Lihe Zheng,

Yang Qiu-Hong,

Jun Xu

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.2827

Subject(s) - luminescence , materials science , full width at half maximum , crystal (programming language) , infrared , doping , ion , irradiation , analytical chemistry (journal) , optoelectronics , optics , chemistry , physics , computer science , programming language , organic chemistry , chromatography , nuclear physics

Bi2O3:BaF2 and BiF3:BaF2 crystals were prepared by TGT (temperature gradient method). Near-infrared broadband luminescence was observed in as-grown Bi2O3:BaF2 crystal. The emission band peaks at 961 nm in the range of 850—1250 nmwith FWHM about 202 nm. The luminescence of Bi2+ and Bi3+ ions in the visible region was observed in BiF3:BaF2 crystal, but there was no near-infrared emission. Then the BiF3: BaF2 crystal was exposed to γ-rays in order to reduce valence states of Bi ions. Near-infrared broadband luminescence was observed in γ-irradiated BiF3:BaF2 crystal. The emission band peaks at 1135 nm in the range of 850—1500 nmwith FWHM about 192 nm. The mechanisms of near-infrared luminescence in Bi2O3:BaF2 crystals and γ-irradiated BiF3:BaF2 crystals were discussed.

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