Open AccessCu deep level center in CdTe solar cell
Author(s) -
Xu Zheng,
Bing Li,
Zhao Wang,
DongTing Zhang,
Feng Liang-Huan,
Jingquan Zhang,
Yaping Cai,
Jiagui Zheng,
Lili Wu,
Wei Li,
Lei Zhi,
Zeng Guang-Gen
Publication year - 2010
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.2783
Subject(s) - cadmium telluride photovoltaics , deep level transient spectroscopy , doping , materials science , solar cell , density functional theory , zinc , optoelectronics , chemistry , silicon , computational chemistry , metallurgy
Cu would be doped and form deep level centers easily in CdTe solar cells. The deep level centers in ZnTe back contact and graphite back contact CdTe solar cells were studied by deep level transient spectroscopy(DLTS). The electronic density of states on zinc blende CdTeVCd system and CdTe doping Cu were analyzed with density functional theory. The d-orbital splitting of Cu2+ in C3v and Td fields was obtained. The results show that two deep centers Ev+0206 eV and Ev+0122 eVrespectivelyare attributed to substitutional Cuenergy of CdTe is reduced after Cu dopingand Cu could replace Cd.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom