Open AccessCrystallized poly-silicon thin film laterally induced by the Ni/Si oxide source
Author(s) -
Zhaojun Liu,
Zhiguo Meng,
Zhao Sun-Yun,
Kwok Hoi Sing,
Chen Wu,
Xiong Shao-Zhen
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.2775
Subject(s) - materials science , nickel , silicon , crystallization , alloy , thin film , oxide , silicon oxide , nickel oxide , sputtering , sputter deposition , chemical engineering , metallurgy , optoelectronics , nanotechnology , silicon nitride , engineering
With a Nickel-Silicon alloy as a target of magnetron-sputtering under Ar /O2 mixed gases, a new type of Ni/Si oxide source called self-released nickel source is fabricated. This kind of nickel source is different with the pure nickel source at both crystallized phenomenon and remainder of Ni. Low temperature poly-Silicon crystallized by self-released nickel source has lower nickel-residua and a controllable crystallization rate related without the thickness of Ni source. That is useful for widen process window. The relations of surface roughness and electrical characters of poly-Si crystallized by different source have been studied and discussed.