Open AccessCHF3 dual-frequency capacitively coupled plasma
Author(s) -
Jia Hu,
YiJun Xu,
Chao Ye
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.2661
Subject(s) - capacitively coupled plasma , materials science , plasma , atomic physics , dielectric , ion , dissociation (chemistry) , low frequency , electron , analytical chemistry (journal) , optoelectronics , physics , chemistry , inductively coupled plasma , chromatography , quantum mechanics , astronomy
This paper investigates the intermediate gas phase in the CHF3 dual-frequency capacitively couple plasma (DF-CCP) driven by the high-frequency (HF) of 1356 MHz2712 MHz or 60 MHz and the low-frequency (LF) of 2 MHz power sourceswhich was used to etch the SiCOH low dielectric constant (low-k) films. The increasing of 2 MHz LF power led to the increase of F radical concentrationand the increasing of HF frequency from 1356 MHz and 2712 MHz to 60 MHz led to the increase of CF2 concentration and a poor spatial uniformity of F radical between the electrodes. According to the electron temperature distribution at different LF power and HF frequencyand the dependence of ion energy on the high frequencythe CF2radicals were found to come from the CHF3 dissociation by the electron-neutrals collisionsand the F radical from the CHF3 dissociation induced by the ions-neutrals thermal collisions.