Open AccessDiagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film
Author(s) -
Liying Liu,
Jialiang Zhang,
Qingchao Guo,
Dezhen Wang
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.2653
Subject(s) - plasma , materials science , dissociation (chemistry) , atomic physics , excitation , electron temperature , polycrystalline silicon , atmospheric pressure , chemical vapor deposition , electron density , silicon , plasma cleaning , excitation temperature , analytical chemistry (journal) , emission spectrum , spectral line , physics , chemistry , nanotechnology , optoelectronics , layer (electronics) , quantum mechanics , astronomy , chromatography , meteorology , thin film transistor
The characteristics of the radio frequency plasma jets at atmospheric pressure in Ar/SiCl4/H2 gas mixture were studied in this paper by using optical emission spectroscopy. Firstly, the electron excitation temperature of plasmas was calculated from the Si atom spectral emission using Boltzmann plots, and then, based on the temperature, the number density of the Si atoms in the plasmas and the dissociation ratio of the SiCl4 were estimated. Finally, the dependence of the excitation temperature, the number density of the Si atoms and the dissociation ratio of the SiCl4 on the discharge power and the gas flow rate were presented.