Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film | Zendy

Liying Liu | Zendy; Zhang Jia-liang | Zendy; Guo Qing-chao | Zendy; Dezhen Wang | Zendy

Open Access

Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film

Author(s) -

Liying Liu,

Zhang Jia-liang,

Guo Qing-chao,

Dezhen Wang

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.2653

Subject(s) - plasma , materials science , dissociation (chemistry) , atomic physics , excitation , electron temperature , polycrystalline silicon , atmospheric pressure , chemical vapor deposition , electron density , silicon , plasma cleaning , excitation temperature , analytical chemistry (journal) , emission spectrum , spectral line , physics , chemistry , nanotechnology , optoelectronics , layer (electronics) , quantum mechanics , astronomy , chromatography , meteorology , thin film transistor

The characteristics of the radio frequency plasma jets at atmospheric pressure in Ar/SiCl4/H2 gas mixture were studied in this paper by using optical emission spectroscopy. Firstly, the electron excitation temperature of plasmas was calculated from the Si atom spectral emission using Boltzmann plots, and then, based on the temperature, the number density of the Si atoms in the plasmas and the dissociation ratio of the SiCl4 were estimated. Finally, the dependence of the excitation temperature, the number density of the Si atoms and the dissociation ratio of the SiCl4 on the discharge power and the gas flow rate were presented.

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