Open AccessResearch on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment
Author(s) -
Bin He,
Zhibin Yao
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1985
Subject(s) - cmos , radiation , dose rate , irradiation , semiconductor , materials science , semiconductor device , space radiation , space (punctuation) , optoelectronics , computer science , optics , physics , medical physics , nanotechnology , nuclear physics , operating system , layer (electronics) , cosmic ray
A new model is presented to predict the radiation response for complementary metal oxide semiconductorCMOSdevices at low dose rate in space environment. In comparison with the linear system response theory model, the prediction results for CMOS devices at low dose rate radiation by using the new model are more close to actually experiment data, and the experimental results for different dose rate of radiation verify the accuracy of the model. Finally, the radiation effects on sensitive parameters of CMOS devices at low dose rate in space environment are predicted by making use of the new model.